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Annealing effect on the formation of high-kdielectric in the W/ultrathin HfO2/Si-substrate system
V. I. Rudakov, E. A. Bogoyavlenskaya, Yu. I. DenisenkoVolume:
38
Language:
english
DOI:
10.1134/s1063785012110120
Date:
November, 2012
File:
PDF, 229 KB
english, 2012