Low-temperature poly-Si nanowire junctionless devices with...

Nanoscale Research Letters 2012 / 12 Vol. 7; Iss. 1

Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3stack structure using an implant-free technique

Chun-Jung Su, Tzu-I Tsai, Horng-Chih Lin, Tiao-Yuan Huang, Tien-Sheng Chao
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Volume:
7
Language:
english
DOI:
10.1186/1556-276x-7-339
Date:
December, 2012
File:
PDF, 300 KB
english, 2012
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