Room light anodic etching of highly doped n-type 4 H-SiC in...

Nanoscale Research Letters 2012 / 12 Vol. 7; Iss. 1

Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces

Gael Gautier, Frederic Cayrel, Marie Capelle, Jérome Billoué, Xi Song, Jean-Francois Michaud
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Volume:
7
Language:
english
DOI:
10.1186/1556-276x-7-367
Date:
December, 2012
File:
PDF, 904 KB
english, 2012
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