Exciton properties in zincblende InGaN-GaN quantum wells...

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

Carlos M Duque, Miguel E Mora-Ramos, Carlos A Duque
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Volume:
7
Language:
english
DOI:
10.1186/1556-276x-7-492
Date:
December, 2012
File:
PDF, 288 KB
english, 2012
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