Initial stage growth of GexSi1−xlayers and Ge quantum dot...

Nanoscale Research Letters 2012 / 12 Vol. 7; Iss. 1

Initial stage growth of GexSi1−xlayers and Ge quantum dot formation on GexSi1−xsurface by MBE

Aleksandr I Nikiforov, Vyacheslav A Timofeev, Serge A Teys, Anton K Gutakovsky, Oleg P Pchelyakov
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Volume:
7
Language:
english
DOI:
10.1186/1556-276x-7-561
Date:
December, 2012
File:
PDF, 377 KB
english, 2012
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