Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5solid electrolyte
Sheikh Ziaur Rahaman, Siddheswar Maikap, Atanu Das, Amit Prakash, Ya Hsuan Wu, Chao-Sung Lai, Ta-Chang Tien, Wei-Su Chen, Heng-Yuan Lee, Frederick T Chen, Ming-Jinn Tsai, Liann-Be ChangVolume:
7
Language:
english
DOI:
10.1186/1556-276x-7-614
Date:
December, 2012
File:
PDF, 1.17 MB
english, 2012