On formation of thin SiO2/a-Si:H interface when biased...

Central European Journal of Physics 2007 / 09 Vol. 5; Iss. 3

On formation of thin SiO2/a-Si:H interface when biased oxidized semiconductor surface interacts with plasma or liquid solution

Emil Pinčík, Hikaru Kobayashi, Masao Takahashi, Róbert Brunner, Stanislav Jurečka, Jaroslav Rusnák
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Volume:
5
Language:
english
DOI:
10.2478/s11534-007-0019-4
Date:
September, 2007
File:
PDF, 458 KB
english, 2007
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