Influence of mole fraction on normal incidence bound‐free absorption in p‐doped InxGa1-xAs/GaAs strained quantum wells
Tadic, M., Ikonic, Z.Volume:
68
Year:
1996
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.116123
File:
PDF, 417 KB
english, 1996