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[NATO Science Series II: Mathematics, Physics and Chemistry] Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Volume 185 || Theoretical Limit for the SiO2 Thickness in Silicon MOS Devices
Flandre, Denis, Nazarov, Alexei N., Hemment, Peter L.F.Volume:
10.1007/1-
Year:
2005
Language:
english
DOI:
10.1007/1-4020-3013-4_36
File:
PDF, 618 KB
english, 2005