Analytic potential and charge model for III-V surrounding...

Journal of Applied Physics 2012 Vol. 112; Iss. 8

Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors

Marin, E. G., Ruiz, F. G., Tienda-Luna, I. M., Godoy, A., Sánchez-Moreno, P., Gámiz, F.
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Volume:
112
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4759275
File:
PDF, 899 KB
english, 2012
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