Raman and photoluminescence studies of biaxial strain in...

Journal of Applied Physics 1997 Vol. 82; Iss. 10

Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC

Davydov, V. Yu., Averkiev, N. S., Goncharuk, I. N., Nelson, D. K., Nikitina, I. P., Polkovnikov, A. S., Smirnov, A. N., Jacobson, M. A., Semchinova, O. K.
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Volume:
82
Year:
1997
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.366310
File:
PDF, 379 KB
english, 1997
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