Properties of GaN layers deposited on AlN/sapphire template substrates
Prażmowska, J, Korbutowicz, R, Szyszka, A, Wośko, M, Serafińczuk, J, Paszkiewicz, R, Podhorodecki, A, Misiewicz, J, Kovač, J, Srnanek, R, Tłaczała, MVolume:
146
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/146/1/012011
Date:
January, 2009
File:
PDF, 685 KB
english, 2009