Substrate nitridation induced modulations in transport...

Journal of Applied Physics 2011 Vol. 110; Iss. 9

Substrate nitridation induced modulations in transport properties of wurtzite GaN∕p-Si (100) heterojunctions grown by molecular beam epitaxy

Bhat, Thirumaleshwara N., Rajpalke, Mohana K., Roul, Basanta, Kumar, Mahesh, Krupanidhi, S. B.
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Volume:
110
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3658867
File:
PDF, 1.28 MB
english, 2011
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