Simulation of junctionless Si nanowire transistors with 3 nm gate length
Ansari, Lida, Feldman, Baruch, Fagas, Giorgos, Colinge, Jean-Pierre, Greer, James C.Volume:
97
Year:
2010
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3478012
File:
PDF, 788 KB
english, 2010