High-power SiC MESFET using a dual p-buffer layer for an...

Chinese Physics B 2013 / 01 Vol. 22; Iss. 1

High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier

Deng, Xiao-Chuan, Sun, He, Rao, Cheng-Yuan, Zhang, Bo
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
22
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/22/1/017302
Date:
January, 2013
File:
PDF, 394 KB
english, 2013
Conversion to is in progress
Conversion to is failed