Modeling of Semiconductor Detectors Made of...

IEEE Transactions on Device and Materials Reliability 2013 / 03 Vol. 13; Iss. 1

Modeling of Semiconductor Detectors Made of Defect-Engineered Silicon: The Effective Space Charge Density

Saadoune, A., Moloi, S. J., Bekhouche, K., Dehimi, L., McPherson, M., Sengouga, N., Jones, B. K.
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Volume:
13
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/TDMR.2012.2234460
Date:
March, 2013
File:
PDF, 434 KB
english, 2013
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