High-field drift velocity of electrons at the Si–SiO2...

High-field drift velocity of electrons at the Si–SiO2 interface as determined by a time-of-flight technique

Cooper, J. A., Nelson, D. F.
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Volume:
54
Year:
1983
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.332170
File:
PDF, 1.25 MB
english, 1983
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