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Point defect reduction and carrier lifetime improvement of Si- and C-face 4H-SiC epilayers
Miyazawa, Tetsuya, Tsuchida, HidekazuVolume:
113
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4793504
File:
PDF, 1.09 MB
english, 2013