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Carrier Gas Dependence at Initial Processes for a -Plane AlN Growth on r -Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy
Tajima, Jumpei, Echizen, Chikashi, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Takada, Kazuya, Koukitu, AkinoriVolume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.055501
Date:
May, 2011
File:
PDF, 598 KB
english, 2011