![](/img/cover-not-exists.png)
Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics
Namkoong, Gon, Doolittle, W. Alan, Brown, April S., Losurdo, Maria, Capezzuto, Pio, Bruno, GiovanniVolume:
91
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1435834
File:
PDF, 1021 KB
english, 2002