Characteristics of ZnO : As/GaN heterojunction diodes...

Journal of Physics D Applied Physics 2013 / 01 Vol. 46; Iss. 3

Characteristics of ZnO : As/GaN heterojunction diodes obtained by PA-MBE

Przezdziecka, E, Wierzbicka, A, Reszka, A, Goscinski, K, Droba, A, Jakiela, R, Dobosz, D, Krajewski, T A, Kopalko, K, Sajkowski, J M, Stachowicz, M, Pietrzyk, M A, Kozanecki, A
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Volume:
46
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/46/3/035101
Date:
January, 2013
File:
PDF, 819 KB
english, 2013
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