Effects of oxide traps, interface traps, and ‘‘border...

Journal of Applied Physics 1993 Vol. 73; Iss. 10

Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices

Fleetwood, D. M., Winokur, P. S., Reber, R. A., Meisenheimer, T. L., Schwank, J. R., Shaneyfelt, M. R., Riewe, L. C.
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Volume:
73
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.353777
File:
PDF, 2.84 MB
english, 1993
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