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Low-Temperature Behaviors of Phonon-Limited Electron Mobility of Sub-10-nm-Thick Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor with (001) and (111) Si Surface Channels
Omura, Yasuhisa, Yamamura, Tsuyoshi, Sato, ShingoVolume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.071204
Date:
July, 2009
File:
PDF, 312 KB
english, 2009