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Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers
Losurdo, Maria, Capezzuto, Pio, Bruno, Giovanni, Namkoong, Gon, Doolittle, W. Alan, Brown, April S.Volume:
91
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1435835
File:
PDF, 473 KB
english, 2002