A systematic study of (NH[sub 4])[sub 2]S passivation (22%,...

Journal of Applied Physics 2011 Vol. 109; Iss. 2

A systematic study of (NH[sub 4])[sub 2]S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al[sub 2]O[sub 3]/In[sub 0.53]Ga[sub 0.47]As/InP system for n-type and p-type In[sub 0.53]Ga[sub 0.47]As epitaxial layers

O’Connor, É., Brennan, B., Djara, V., Cherkaoui, K., Monaghan, S., Newcomb, S. B., Contreras, R., Milojevic, M., Hughes, G., Pemble, M. E., Wallace, R. M., Hurley, P. K.
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Volume:
109
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3533959
File:
PDF, 1.83 MB
english, 2011
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