Mechanism for rapid thermal annealing improvements in...

Applied Physics Letters 2000 Vol. 77; Iss. 15

Mechanism for rapid thermal annealing improvements in undoped GaN[sub x]As[sub 1−x]/GaAs structures grown by molecular beam epitaxy

Buyanova, I. A., Pozina, G., Hai, P. N., Thinh, N. Q., Bergman, J. P., Chen, W. M., Xin, H. P., Tu, C. W.
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Volume:
77
Year:
2000
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1315632
File:
PDF, 353 KB
english, 2000
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