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Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells
Malinauskas, T., Kadys, A., Grinys, T., Nargelas, S., Aleksiejnas, R., Miasojedovas, S., Mickeviius, J., Tomašinas, R., Jarašinas, K., Vengris, M., Okur, S., Avrutin, V., Li, X., Zhang, F., Ozgür, U.,Year:
2012
Language:
english
DOI:
10.1117/12.906488
File:
PDF, 712 KB
english, 2012