N-polar GaN∕AlGaN∕GaN high electron mobility...

N-polar GaN∕AlGaN∕GaN high electron mobility transistors

Rajan, Siddharth, Chini, Alessandro, Wong, Man Hoi, Speck, James S., Mishra, Umesh K.
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Volume:
102
Year:
2007
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2769950
File:
PDF, 995 KB
english, 2007
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