Peak Class F and Inverse Class F Drain Efficiencies Using...

IEEE Microwave and Wireless Components Letters 2009 / 07 Vol. 19; Iss. 7

Peak Class F and Inverse Class F Drain Efficiencies Using Si LDMOS in a Limited Bandwidth Design

Sheikh, A., Roff, C., Benedikt, J., Tasker, P.J., Noori, B., Wood, J., Aaen, P.H.
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Volume:
19
Language:
english
Journal:
IEEE Microwave and Wireless Components Letters
DOI:
10.1109/LMWC.2009.2022138
Date:
July, 2009
File:
PDF, 315 KB
english, 2009
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