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Simulation study of new 3-terminal devices for high speed STT-RAM
Zhang, Shuchao, Hu, Jiangfeng, Chen, Peiyi, Deng, NingVolume:
32
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/32/7/074007
Date:
July, 2011
File:
PDF, 1.50 MB
english, 2011