Quality of the Oxidation Interface of AlGaN in...

IEEE Transactions on Electron Devices 2012 / 12 Vol. 59; Iss. 12

Quality of the Oxidation Interface of AlGaN in Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors

Chiu, Hsien-Chin, Yang, Chih-Wei, Chen, Chao-Hung, Wu, Chia-Hsuan
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Volume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2012.2215872
Date:
December, 2012
File:
PDF, 644 KB
english, 2012
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