Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices
Gehring, A., Selberherr, S.Volume:
4
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/TDMR.2004.836727
Date:
September, 2004
File:
PDF, 803 KB
english, 2004