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[IEEE 2011 IEEE 4th International Nanoelectronics Conference (INEC) - Tao-Yuan, Taiwan (2011.06.21-2011.06.24)] The 4th IEEE International NanoElectronics Conference - Comparing the parameters of PSP and BSIM4 models for 65 nm MOSFETs before and after hot-carrier stress
Chen, Shuang-Yuan, Chen, Yu, Wu, Meng-Chiuan, Huang, Heng-Sheng, King, Chin-Lung, Wu, Shin-YiYear:
2011
Language:
english
DOI:
10.1109/INEC.2011.5991674
File:
PDF, 295 KB
english, 2011