Study on Gallium Nitride-Based Metal–Oxide–Semiconductor Capacitors With RF Magnetron Sputtered $\hbox{Y}_{2}\hbox{O}_{3}$ Gate
Quah, Hock Jin, Cheong, Kuan YewVolume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2012.2212903
Date:
November, 2012
File:
PDF, 987 KB
english, 2012