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[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - High Current Gain Silicon Carbide Bipolar Power Transistors
Domeij, M., Hyung-Seok Lee,, Zetterling, C.-M., Ostling, M., Schoner, A.Year:
2006
Language:
english
DOI:
10.1109/ISPSD.2006.1666091
File:
PDF, 3.17 MB
english, 2006