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Dissociation of Al[sub 2]O[sub 3](0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy
Van Nostrand, J. E., Solomon, J., Saxler, A., Xie, Q.-H., Reynolds, D. C., Look, D. C.Volume:
87
Year:
2000
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.373608
File:
PDF, 454 KB
english, 2000