Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures
Keller, S., Suh, C. S., Fichtenbaum, N. A., Furukawa, M., Chu, R., Chen, Z., Vijayraghavan, K., Rajan, S., DenBaars, S. P., Speck, J. S., Mishra, U. K.Volume:
104
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3006132
File:
PDF, 766 KB
english, 2008