The defect character of GaN growth on r-plane sapphire

Journal of Applied Physics 2010 Vol. 107; Iss. 7

The defect character of GaN growth on r-plane sapphire

Smalc-Koziorowska, J., Tsiakatouras, G., Lotsari, A., Georgakilas, A., Dimitrakopulos, G. P.
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Volume:
107
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3369439
File:
PDF, 1.95 MB
english, 2010
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