GaN Power Transistor Modeling for High-Speed Converter...

IEEE Transactions on Electron Devices 2013 / 02 Vol. 60; Iss. 2

GaN Power Transistor Modeling for High-Speed Converter Circuit Design

Nakajima, Akira, Takao, Kazuto, Ohashi, Hiromichi
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2012.2226180
Date:
February, 2013
File:
PDF, 1.12 MB
english, 2013
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