Origins of Hole Doping and Relevant Optoelectronic...

Journal of the American Chemical Society 2010 / 10 Vol. 132; Iss. 42

Origins of Hole Doping and Relevant Optoelectronic Properties of Wide Gap p-Type Semiconductor, LaCuOSe

Hiramatsu, Hidenori, Kamiya, Toshio, Tohei, Tetsuya, Ikenaga, Eiji, Mizoguchi, Teruyasu, Ikuhara, Yuichi, Kobayashi, Keisuke, Hosono, Hideo
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Volume:
132
Language:
english
Journal:
Journal of the American Chemical Society
DOI:
10.1021/ja107042r
Date:
October, 2010
File:
PDF, 501 KB
english, 2010
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