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Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”
Kang, Hyun-Chul, Olac-vaw, Roman, Karasawa, Hiromi, Miyamoto, Yu, Handa, Hiroyuki, Suemitsu, Tetsuya, Fukidome, Hirokazu, Suemitsu, Maki, Otsuji, TaiichiVolume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.079201
Date:
July, 2010
File:
PDF, 66 KB
english, 2010