High Electron Mobility in Vacuum and Ambient for PDIF-CN...

High Electron Mobility in Vacuum and Ambient for PDIF-CN 2 Single-Crystal Transistors

Molinari, Anna S., Alves, Helena, Chen, Zhihua, Facchetti, Antonio, Morpurgo, Alberto F.
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Volume:
131
Language:
english
Journal:
Journal of the American Chemical Society
DOI:
10.1021/ja809848y
Date:
February, 2009
File:
PDF, 365 KB
english, 2009
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