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Donor complex formation due to a high-dose Ge implant into Si
Gupta, Ashawant, Rahman, M. Mahmudur, Qiao, Jianmin, Yang, Cary Y., Im, Seongil, Cheung, Nathan W., Yu, Paul K. L.Volume:
75
Year:
1994
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.355963
File:
PDF, 635 KB
english, 1994