[IEEE IEEE International Electron Devices Meeting - Washington, DC, USA (5-8 Dec. 1993)] Proceedings of IEEE International Electron Devices Meeting - Novel NICE (nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0.25 μm dual gate CMOS
Kuroi, T., Hamaguchi, T., Shirahata, M., Okumura, Y., Kawasaki, Y., Inuishi, M., Tsubouchi, N.Year:
1993
Language:
english
DOI:
10.1109/IEDM.1993.347342
File:
PDF, 352 KB
english, 1993