Influence of substrate nitridation temperature on epitaxial...

Nanotechnology 2013 / 01 Vol. 24; Iss. 3

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate

Wierzbicka, A, Zytkiewicz, Z R, Kret, S, Borysiuk, J, Dluzewski, P, Sobanska, M, Klosek, K, Reszka, A, Tchutchulashvili, G, Cabaj, A, Lusakowska, E
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Volume:
24
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/24/3/035703
Date:
January, 2013
File:
PDF, 2.59 MB
english, 2013
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