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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and Vt-tuning dipoles with gate-first process
Ando, T., Frank, M. M., Choi, K., Choi, C., Bruley, J., Hopstaken, M., Copel, M., Cartier, E., Kerber, A., Callegari, A., Lacey, D., Brown, S., Yang, Q., Narayanan, V.Year:
2009
Language:
english
DOI:
10.1109/IEDM.2009.5424335
File:
PDF, 633 KB
english, 2009