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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Superior NBTI reliability of SiGe channel pMOSFETs: Replacement gate, FinFETs, and impact of Body Bias
Franco, J., Kaczer, B., Eneman, G., Roussel, Ph.J., Grasser, T., Mitard, J., Ragnarsson, L.-A., Cho, M., Witters, L., Chiarella, T., Togo, M., Wang, W.-E, Hikavyy, A., Loo, R., Horiguchi, N., GroeseneYear:
2011
Language:
english
DOI:
10.1109/IEDM.2011.6131580
File:
PDF, 593 KB
english, 2011