Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates
Suski, T., Staszczak, G., Grzanka, S., Czernecki, R., Litwin-Staszewska, E., Piotrzkowski, R., Dmowski, L. H., Khachapuridze, A., KrysÌko, M., Perlin, P., Grzegory, I.Volume:
108
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3466768
File:
PDF, 542 KB
english, 2010