Hole carrier concentration and photoluminescence in...

Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates

Suski, T., Staszczak, G., Grzanka, S., Czernecki, R., Litwin-Staszewska, E., Piotrzkowski, R., Dmowski, L. H., Khachapuridze, A., Kryśko, M., Perlin, P., Grzegory, I.
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Volume:
108
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3466768
File:
PDF, 542 KB
english, 2010
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