High-fluence Si-implanted diamond: Optimum implantation...

High-fluence Si-implanted diamond: Optimum implantation temperature for SiC formation

Weishart, H., Eichhorn, F., Heera, V., Pécz, B., Barna, Á., Skorupa, W.
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Volume:
98
Year:
2005
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2009073
File:
PDF, 385 KB
english, 2005
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