High-fluence Si-implanted diamond: Optimum implantation temperature for SiC formation
Weishart, H., Eichhorn, F., Heera, V., PeÌcz, B., Barna, AÌ., Skorupa, W.Volume:
98
Year:
2005
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2009073
File:
PDF, 385 KB
english, 2005