Characterization of the parasitic bipolar amplification in...

IEEE Transactions on Nuclear Science 2002 / 06 Vol. 49; Iss. 3

Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation

Ferlet-Cavrois, V., Marcandella, C., Giraud, G., Gasiot, G., Colladant, I., Musseau, O., Fenouillet, C., du Port de Poncharra, J.
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Volume:
49
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2002.1039683
Date:
June, 2002
File:
PDF, 320 KB
english, 2002
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